Patent Number: 8,877,593

Title: Semiconductor device including an asymmetric feature, and method of making the same

Abstract: A semiconductor device (e.g., field effect transistor (FET)) having an asymmetric feature, includes a first gate formed on a substrate, first and second diffusion regions formed in the substrate on a side of the first gate, and first and second contacts which contact the first and second diffusion regions, respectively, the first contact being asymmetric with respect to the second contact.

Inventors: Chang; Josephine (Mahopac, NY), Lauer; Isaac (Mahopac, NY), Lin; Chung-Hsun (White Plains, NY), Sleight; Jeffrey (Ridgefield, CT)

Assignee: International Business Machines Corporation

International Classification: H01L 21/336 (20060101)

Expiration Date: 2019-11-04 0:00:00