Patent Number: 8,877,596

Title: Semiconductor devices with asymmetric halo implantation and method of manufacture

Abstract: a method comprises forming a hardmask over one or more gate structures. The method further comprises forming a photoresist over the hardmask. The method further comprises forming an opening in the photoresist over at least one of the gate structures. The method further comprises stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further comprises removing the photoresist. The method further comprises providing a halo implant on a side of the at least one of the gate structures.

Inventors: Bhagat; Darshana N. (Framingham, MA), Dunbar; Thomas J. (Burlington, VT), Lim; Yen Li (Essex Junction, VT), Rankin; Jed H. (Richmond, VT), Shah; Eva A. (Essex Junction, VT)

Assignee: International Business Machines Corporation

International Classification: H01L 21/265 (20060101); H01L 21/425 (20060101)

Expiration Date: 2019-11-04 0:00:00