Patent Number: 8,877,603

Title: Semiconductor-on-oxide structure and method of forming

Abstract: Semiconductor-on-oxide structures and related methods of forming such structures are disclosed. In one case, a method includes: forming a first dielectric layer over a substrate; forming a first conductive layer over the first dielectric layer, the first conductive layer including one of a metal or a silicide; forming a second dielectric layer over the first conductive layer; bonding a donor wafer to the second dielectric layer, the donor wafer including a donor dielectric and a semiconductor layer; cleaving the donor wafer to remove a portion of the donor semiconductor layer; forming at least one semiconductor isolation region from an unremoved portion of the donor semiconductor layer; and forming a contact to the first conductive layer through donor dielectric and the second dielectric layer.

Inventors: Barth, Jr.; John E. (Williston, VT), Ho; Herbert L. (New Windsor, NY), Khan; Babar A. (Ossining, NY), Peterson; Kirk D. (Jericho, VT)

Assignee: International Business Machines Corporation

International Classification: H01L 21/76 (20060101); H01L 21/30 (20060101); H01L 21/46 (20060101)

Expiration Date: 2019-11-04 0:00:00