Patent Number: 8,878,213

Title: Semiconductor light emitting device

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.

Inventors: Sugiyama; Naoharu (Kanagawa-ken, JP), Shioda; Tomonari (Kanagawa-ken, JP), Kimura; Shigeya (Kanagawa-ken, JP), Tachibana; Koichi (Kanagawa-ken, JP), Nunoue; Shinya (Chiba-ken, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 33/00 (20100101)

Expiration Date: 2019-11-04 0:00:00