Patent Number: 8,878,250

Title: Electronic device and method for producing electronic device

Abstract: Electronic device is provided, including: a base wafer whose surface is made of silicon crystal; a Group 3-5 compound semiconductor crystal formed directly or indirectly on partial region of the silicon crystal; an electronic element including a portion of the Group 3-5 compound semiconductor crystal as active layer; an insulating film formed directly or indirectly on the base wafer and covering the electronic element; an electrode formed directly or indirectly on the insulating film; a first coupling wiring extending through the insulating film, having at least a portion thereof formed directly or indirectly on the insulating film, and electrically coupling the electronic element with the electrode; a passive element formed directly or indirectly on the insulating film; a second coupling wiring extending through the insulating film, having at least a portion thereof formed directly or indirectly on the insulating film, and electrically coupling the electronic element with the passive element.

Inventors: Hata; Masahiko (Tsuchiura, JP), Yamanaka; Sadanori (Chiba, JP), Takada; Tomoyuki (Tsukuba, JP), Honjo; Kazuhiko (Ibaraki, JP)

Assignee: Sumitomo Chemical Company, Limited

International Classification: H01L 29/737 (20060101)

Expiration Date: 2019-11-04 0:00:00