Patent Number: 8,878,259

Title: Super lattice/quantum well nanowires

Abstract: Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.

Inventors: Hovel; Harold J. (Katonah, NY), Huang; Qiang (Sleepy Hollow, NY), Shao; Xiaoyan (Yorktown Heights, NY), Vichiconti; James (Carmel, NY), Walker; George F. (New York, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 29/94 (20060101); H01L 31/113 (20060101); H01L 31/119 (20060101); H01L 31/062 (20120101); H01L 29/76 (20060101)

Expiration Date: 2019-11-04 0:00:00