Patent Number: 8,878,263

Title: Semiconductor device, method for manufacturing same, and solid-state image sensing device

Abstract: Disclosed herein is a semiconductor device including: a semiconductor substrate; a gate insulating film formed on surfaces of the semiconductor substrate including an internal surface of a hole formed in the semiconductor substrate and formed by radical oxidation or plasma oxidation; and a gate electrode formed as buried in the hole. The gate insulating film and the gate electrode form a vertical MOS.

Inventors: Manda; Shuji (Kumamoto, JP)

Assignee: Sony Corporation

International Classification: H01L 31/0224 (20060101)

Expiration Date: 2019-11-04 0:00:00