Patent Number: 8,878,269

Title: Band gap improvement in DRAM capacitors

Abstract: A method for forming a DRAM MIM capacitor stack having low leakage current and low EOT involves the use of an compound high k dielectric material. The dielectric material further comprises a dopant. One component of the compound high k dielectric material is present in a concentration between about 30 atomic % and about 80 atomic and more preferably between about 40 atomic % and about 60 atomic %. In some embodiments, the compound high k dielectric material comprises an alloy of TiO.sub.2 and ZrO.sub.2 and further comprises a dopant of Al.sub.2O.sub.3. In some embodiments, the compound high k dielectric material comprises an admixture of TiO.sub.2 and HfO.sub.2 and further comprises a dopant of Al.sub.2O.sub.3.

Inventors: Chen; Hanhong (Milpitas, CA), Deweerd; Wim (San Jose, CA), Malhotra; Sandra G. (Fort Collins, CO), Ode; Hiroyuki (Higashihiroshima, JP)

Assignee: Intermolecular, Inc.

International Classification: H01L 27/108 (20060101)

Expiration Date: 2019-11-04 0:00:00