Patent Number: 8,878,272

Title: Semiconductor device having stacked storage nodes of capacitors in cell region separated from peripheral region

Abstract: Methods of fabricating a semiconductor device are provided. The method includes forming a first mold layer on a in a cell region and a peripheral region, forming first storage nodes penetrating the first mold layer in the cell region and a first contact penetrating the first mold layer in the peripheral region, forming a second mold layer on the first mold layer, forming second storage nodes that penetrate the second mold layer to be connected to respective ones of the first storage nodes, removing the second mold layer in the cell and peripheral regions and the first mold layer in the cell region to leave the first mold layer in the peripheral region, and forming a second contact that penetrates a first interlayer insulation layer to be connected to the first contact. Related devices are also provided.

Inventors: Kim; Jun Ki (Seoul, KR)

Assignee: SK Hynix Inc.

International Classification: H01L 27/108 (20060101); H01L 21/02 (20060101)

Expiration Date: 2019-11-04 0:00:00