Patent Number: 8,878,299

Title: Buried channel transistor and method of forming the same

Abstract: A semiconductor device may include a plurality of memory cells. The memory cells may be formed with respective fin shaped active regions with respective recesses formed therein. Thicknesses of the fins may be made relatively thicker around the recesses, such as by selective epitaxial growth around the recesses. The additional thicknesses may be asymmetrical so that portions of the fin on one side are larger than an opposite side. Related methods and systems are also disclosed.

Inventors: Lee; Ki-Seok (Busan, KR), Kim; Dae-Ik (Hwaseong-si, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 21/70 (20060101)

Expiration Date: 2019-11-04 0:00:00