Patent Number: 8,878,306

Title: Semiconductor device

Abstract: A method of manufacturing a semiconductor device involves process for forming gate insulating films of different thickness on a semiconductor substrate, depositing films that constitute a gate electrode, removing the gate insulating films having different thickness formed on an impurity diffusion region surface of a transistor including the gate electrode, and doping impurities into a portion where the gate insulating film is removed.

Inventors: Kajimoto; Minori (Yokkaichi, JP), Noguchi; Mitsuhiro (Yokohama, JP), Nitta; Hiroyuki (Yokkaichi, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 27/088 (20060101)

Expiration Date: 2019-11-04 0:00:00