Patent Number: 8,878,307

Title: Shared contacts for MOSFET devices

Abstract: In one aspect, the present invention provides electronic devices that comprise a doped semiconductor shared contact between (a) a gate conductor region of at least one transistor and (b) a source/drain diffusion region of at least one transistor. One specific example of such as shared contact, among many others, is a doped SiGe shared contact between (a) a gate conductor region shared by an N-channel MOSFET and a P-channel MOSFET and (b) a drain diffusion region of an N-channel MOSFET or of a P-channel MOSFET.

Inventors: Miyata; Koji (Mahopac, NY)

Assignee: Sony Corporation

International Classification: H01L 29/76 (20060101)

Expiration Date: 2019-11-04 0:00:00