Patent Number: 8,878,322

Title: Perovskite manganese oxide thin film and manufacturing method therefor

Abstract: A perovskite manganese oxide thin film formed on a substrate that allows a first order phase transition and has A-site ordering. The thin film contains Ba and a rare earth element in the A sites of a perovskite crystal lattice and has an (m10) orientation for which m=2n, and 9.gtoreq.n.gtoreq.1. A method for manufacturing the film includes forming in a controlled atmosphere using laser ablation an atomic layer or thin film that assumes a pyramidal structure having oxygen-deficient sites in a plane containing the rare earth element and oxygen; and filling the oxygen-deficient sites with oxygen. The controlled atmosphere has an oxygen partial pressure controlled to a thermodynamically required value for creating oxygen deficiencies and contains a gas other than oxygen, and has a total pressure that is controlled to a value at which the A sites have a fixed compositional ratio.

Inventors: Ogimoto; Yasushi (Higashiyamato, JP)

Assignee: Fuji Electric Co., Ltd.

International Classification: H01L 29/82 (20060101)

Expiration Date: 2019-11-04 0:00:00