Patent Number: 8,878,364

Title: Method for fabricating semiconductor device and semiconductor device

Abstract: A method for fabricating a semiconductor device according to an embodiment, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a high melting metal film on a side wall and a bottom surface of the opening; forming a seed film of copper (Cu) on the high melting metal film; performing nitriding process after the seed film is formed; and performing electroplating process, in which a Cu film is buried in the opening while energizing the seed film after performing nitriding process.

Inventors: Morita; Toshiyuki (Mie, JP), Hatazaki; Akitsugu (Mie, JP), Ito; Kazumasa (Mie, JP), Toyoda; Hiroshi (Mie, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 23/48 (20060101)

Expiration Date: 2019-11-04 0:00:00