Patent Number: 8,879,307

Title: Magnetoresistive device and nonvolatile memory with the same

Abstract: A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.

Inventors: Kitagawa; Eiji (Yokohama, JP), Shimomura; Naoharu (Tokyo, JP), Yoda; Hiroaki (Seongnam-Si, KR), Ito; Junichi (Yokohama, JP), Amano; Minoru (Sagamihara, JP), Kamata; Chikayoshi (Kawasaki, JP), Abe; Keiko (Yokohama, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: G11C 11/00 (20060101)

Expiration Date: 2019-11-04 0:00:00