Patent Number: 8,880,777

Title: Complex memory device and I/O processing method using the same

Abstract: A non-volatile mass storage memory and an input/output processing method using the memory are provided. The memory device includes a storage unit including a non-volatile random access memory and a flash memory and a controller to control the storage to process an input/output request. Accordingly, system memories having different purposes and functionalities, such as a flash memory and a dynamic random access memory (DRAM), may be integrated with each other.

Inventors: Kim; Jin-kyu (Seoul, KR), Lee; Hyung-gyu (Seoul, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: G06F 12/02 (20060101)

Expiration Date: 2019-11-04 0:00:00