Patent Number: 8,881,071

Title: Photolithography mask design simplification

Abstract: A photolithography mask design is simplified. In one example, a target mask design is optimized for a photolithography mask. Medial axes of the design and assist features on the optimized mask are identified. These are simplified to lines. Lines that are distant from a respective design feature are pruned. The remaining lines are simplified and then thickened to form assist features.

Inventors: Singh; Vivek K. (Portland, OR), Baidva; Bikram (Hillsboro, OR), Dandekar; Omkar S. (Hillsboro, OR), Erten; Hale (Hillsboro, OR)

Assignee: Intel Corporation

International Classification: G06F 17/50 (20060101)

Expiration Date: 2019-11-04 0:00:00