Patent Number: 9,045,819

Title: Method for forming thin film while providing cooling gas to rear surface of substrate

Abstract: Deterioration of the degree of vacuum in a vacuum chamber is prevented while securing adequate cooling performance by gas cooling. A substrate 21 is provided in a vacuum, and the cooling body 1 is provided close to a film non-formation surface of the substrate 21. A thin film is formed by depositing a film forming material on a film formation surface of the substrate 21 while introducing a cooling gas into between the substrate 21 and the cooling body 1. At this time, a gas which reacts with the film forming material is introduced as the cooling gas.

Inventors: Honda; Kazuyoshi (Osaka, JP), Shinokawa; Yasuharu (Osaka, JP), Yagi; Hiromasa (Osaka, JP), Shibutani; Satoshi (Osaka, JP), Okazaki; Sadayuki (Osaka, JP), Ogawa; Yuko (Osaka, JP), Suetsugu; Daisuke (Osaka, JP)

Assignee: Panasonic Intellectual Property Management Co., Ltd.

International Classification: C23C 14/24 (20060101)

Expiration Date: 2019-06-02 0:00:00