Patent Number: 9,384,879

Title: Magnetic multilayer structure

Abstract: A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.

Inventors: Herget; Philipp (San Jose, CA), O'Sullivan; Eugene J. (Nyack, NY), Romankiw; Lubomyr T. (Briarcliff Manor, NY), Wang; Naigang (Ossining, NY), Webb; Bucknell C. (Yorktown Heights, NY)


International Classification: H01L 29/82 (20060101); H01L 27/06 (20060101); H01F 7/02 (20060101); H01L 49/02 (20060101)

Expiration Date: 2020-07-05 0:00:00