Patent Number: 9,385,030

Title: Spacer to prevent source-drain contact encroachment

Abstract: Aspects of the present invention relate to approaches for preventing contact encroachment in a semiconductor device. A first portion of a contact trench can be etched partway to a source-drain region of the semiconductor device. A dielectric liner can be deposited in this trench. A second etch can be performed on the lined trench to etch the contact trench channel the remainder of the way to the source-drain region. This leaves a portion of the dielectric liner remaining in the trench (e.g., covering the vertical walls of the trench) after the second etch.

Inventors: Lee; Yong M. (Mechanicville, NY), Hu; Yue (Mechanicville, NY), Peng; Wen-Pin (Clifton Park, NY)

Assignee: GLOBALFOUNDRIES INC.

International Classification: H01L 21/00 (20060101); H01L 21/84 (20060101); H01L 21/768 (20060101); H01L 21/283 (20060101); H01L 29/66 (20060101); H01L 29/417 (20060101)

Expiration Date: 2020-07-05 0:00:00