Patent Number: 9,385,087

Title: Polysilicon resistor structure having modified oxide layer

Abstract: Various embodiments include resistor structures. Particular embodiments include a resistor structure having multiple oxide layers, at least one of which includes a modified oxide. The modified oxide can aid in controlling the thermal capacitance and the thermal time constant of the resistor structure, or the thermal dissipation within the resistor structure.

Inventors: Chakraborty; Debarsi (Bangalore, IN), Chatterjee; Aveek N. (Bangalore, IN)

Assignee: GLOBALFOUNDRIES INC.

International Classification: H01L 23/538 (20060101); H01L 49/02 (20060101); H01L 23/522 (20060101)

Expiration Date: 2020-07-05 0:00:00