Patent Number: 9,385,333

Title: Process for producing thin film field-effect transistor

Abstract: A process for producing a thin film field-effect transistor includes providing a gate electrode, a gate insulating film, and source and drain electrodes, treating entire surfaces of the source and drain electrodes with a mixture of sulfuric acid and hydrogen peroxide, and providing an organic electronic material layer containing an organic electronic material on the gate insulating film to be in electrical contact with the source and drain electrodes. A reaction product of the organic electronic material, sulfuric acid and hydrogen peroxide containing a sulfonated product of the organic electronic material is present only at an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer to thereby increase the electroconductivity of the organic electronic material and reduce a charge injection barrier from the source electrode to the organic electronic material.

Inventors: Maeda; Takahiko (Hino, JP), Kawakami; Haruo (Miura, JP), Kato; Hisato (Hachioji, JP), Sekine; Nobuyuki (Hachioji, JP), Kato; Kyoko (Zushi, JP)

Assignee: FUJI ELECTRIC CO., LTD.

International Classification: H01L 51/05 (20060101); H01L 51/10 (20060101); H01L 51/00 (20060101)

Expiration Date: 2020-07-05 0:00:00