Patent Number: 9,431,295

Title: Interconnect structure including a modified photoresist as a permanent interconnect dielectric and method of fabricating same

Abstract: An interconnect structure is provided that may include at least one cured permanent patterned dielectric material located on a surface of a substrate. The at least one cured permanent patterned dielectric material is a cured product of a patterned photoresist that includes a dielectric enabling element therein. The structure further includes at least one conductively filled region embedded within the at least one cured permanent patterned dielectric material.

Inventors: Lin; Qinghuang (Yorktown Heights, NY)

Assignee: GLOBALFOUNDRIES INC.

International Classification: H01L 21/768 (20060101); H01L 21/027 (20060101); H01L 21/3105 (20060101); H01L 23/532 (20060101); H01L 21/311 (20060101)

Expiration Date: 2020-08-30 0:00:00