Patent Number: 9,431,399

Title: Method for forming merged contact for semiconductor device

Abstract: A method for forming a semiconductor device comprises forming a first fin and a second fin on a semiconductor substrate, forming a sacrificial gate stack over a channel region of the first fin and the second fin, depositing a layer of spacer material over the first fin and the second fin, depositing a layer of dielectric material over the layer of spacer material, removing a portion of the dielectric material to form a first cavity that exposes a portion of the first fin, epitaxially growing a first semiconductor material on the exposed portion of the first fin to form a source/drain region on the first fin, depositing a protective layer on the source/drain region on the first fin, removing a portion of the dielectric material to form a second cavity that exposes a portion of the second fin, and epitaxially growing a source/drain region on the second fin.

Inventors: Alptekin; Emre (Fishkill, NY), Pranatharthiharan; Balasubramanian (Watervliet, NY), Kanakasabapathy; Sivananda (Niskayuna, NY), Ramachandran; Ravikumar (Pleasantville, NY), Yu; Mickey H. (Essex Junction, VT)

Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION

International Classification: H01L 21/336 (20060101); H01L 21/8238 (20060101); H01L 27/092 (20060101); H01L 29/66 (20060101)

Expiration Date: 2020-08-30 0:00:00