Patent Number: 9,431,485

Title: Formation of finFET junction

Abstract: A method of forming a finFET structure having an ion implanted intermediate region next to the channel region of a finFET gate. The intermediate region is formed in a manner to reduce or eliminate migration of the dopant to undoped regions of the finFET thus forming abrupt finFET junction.

Inventors: Ahmed; Shafaat (Newburgh, NY), Chowdhury; Murshed M. (Fremont, CA), Dasgupta; Aritra (Wappingers Falls, NY), Hasanuzzaman; Mohammad (Beacon, NY), Khan; Shahrukh Akbar (Danbury, CT), Nag; Joyeeta (Wappingers Falls, NY)

Assignee: GlobalFoundries, Inc.

International Classification: H01L 21/265 (20060101); H01L 29/66 (20060101); H01L 29/10 (20060101); H01L 29/78 (20060101)

Expiration Date: 2020-08-30 0:00:00