Patent Number: 9,431,622

Title: Quantum dot optoelectronic device and methods therfor

Abstract: An optoelectronic device and method for fabricating optoelectronic device, comprising: forming a quantum dot layer on a substrate including at least one electronically conductive layer, including a plurality of quantum dots which have organic capping layers; and removing organic capping layers from the quantum dots of the quantum dot layer by physically treating the quantum dot layer, the physical treatment including both thermal treatment and plasma processing.

Inventors: Parsapour; Farzad (Bartlett, TN)

Assignee: Brother International Corporation

International Classification: B05D 5/12 (20060101); H01L 29/08 (20060101); H01L 51/42 (20060101); H01L 31/0352 (20060101); H01L 51/00 (20060101)

Expiration Date: 2020-08-30 0:00:00