Patent Number: 9,431,793

Title: Semiconductor laser device

Abstract: A semiconductor laser device in an embodiment includes a compound semiconductor layer and a silicon layer. The compound semiconductor layer includes an active layer emitting laser light and has a first mesa structure. The silicon layer is bonded with the compound semiconductor layer. A diffraction grating is provided on a surface of the silicon layer which faces the compound semiconductor layer, and includes a main diffraction grating and two sub-diffraction gratings. The main diffraction grating extends in a longitudinal direction of the first mesa structure; the sub-diffraction gratings are disposed on both sides of the main diffraction grating.

Inventors: Suzuki; Nobuo (Kamakura, JP), Tohyama; Masaki (Yokohama, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01S 5/12 (20060101); H01S 5/10 (20060101); H01S 5/065 (20060101); H01S 5/026 (20060101); H01S 5/02 (20060101); H01S 5/042 (20060101); H01S 5/22 (20060101); H01S 5/343 (20060101)

Expiration Date: 2020-08-30 0:00:00