Patent Number: 9,970,125

Title: Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt

Abstract: An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.

Inventors: Mackintosh; Brian H. (Concord, MA), Kellerman; Peter L. (Essex, MA), Sun; Dawei (Nashua, NH)

Assignee: Varian Semiconductor Equipment Associates, Inc.

International Classification: C30B 15/20 (20060101); C30B 15/00 (20060101); C30B 15/14 (20060101); C30B 15/06 (20060101); C30B 29/06 (20060101)

Expiration Date: 2022-05-15 0:00:00