Patent Number: 9,970,127

Title: Method and apparatus for producing large, single-crystals of aluminum nitride

Abstract: Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm.sup.-2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.

Inventors: Schowalter; Leo (Latham, NY), Slack; Glen A. (Scotia, NY), Rojo; Juan Carlos (South Beach, NY), Bondokov; Robert T. (Watervliet, NY), Morgan; Kenneth E. (Castleton, NY), Smart; Joseph A. (Mooresville, NC)

Assignee: CRYSTAL IS, INC.

International Classification: B32B 3/00 (20060101); C30B 23/02 (20060101); C30B 11/00 (20060101); C30B 23/00 (20060101); C30B 29/40 (20060101); H01L 33/00 (20100101); H01L 29/04 (20060101); H01L 29/06 (20060101); H01L 29/32 (20060101); C30B 25/16 (20060101); H01L 29/20 (20060101); H01L 33/32 (20100101); H01L 33/12 (20100101); C30B 25/10 (20060101); C30B 25/14 (20060101); C30B 25/20 (20060101); H01L 21/02 (20060101); H01L 29/205 (20060101); H01L 29/66 (20060101); H01L 29/778 (20060101); H01L 33/02 (20100101)

Expiration Date: 2022-05-15 0:00:00